X-ray Failure Analysis provides non-destructive internal inspection of semiconductor packages and electronic assemblies.

This technique is used to detect internal defects such as voids, cracks, delamination, solder abnormalities, and misalignment without altering the sample.

SEM analysis is commonly combined with EDX elemental analysis and serves as a critical step in root-cause investigation and failure mechanism determination.

Typical applications: IC packages, RF modules, interconnect inspection, die surface analysis, solder joints, and material defect evaluation.

EDX analysis supports failure investigations by identifying contamination, material anomalies, oxidation, corrosion, and elemental migration that may contribute to device failure.

FIB is used to investigate interconnect structures, die attach regions, vias, pads, and buried features that are not accessible through surface inspection methods.

FIB cross-sectioning is typically combined with SEM imaging and EDX analysis to confirm failure mechanisms and support accurate root-cause determination.

EMMI detects photon emissions associated with leakage paths, shorts, junction breakdown, and abnormal current flow, enabling precise identification of electrical failure locations.

EMMI analysis is commonly used as a pre-localization step to guide subsequent FIB cross-section, SEM, and EDX analysis, improving analysis accuracy and efficiency.

This technique enables detection of delamination, voids, cracks, and interface separation at material boundaries such as die attach, mold compound, and substrate interfaces.

C-SAM analysis is commonly applied as an early screening step to guide subsequent failure analysis activities, reducing risk and improving investigation efficiency.